Touch panel, touch display device, and manufacturing method of touch panel

ABSTRACT

A manufacturing method of a touch panel includes following steps. The first sensing electrodes and the second sensing electrodes are formed on a substrate first. Connecting bridges are formed next, wherein adjacent two first sensing electrodes are connected by at least one connecting bridge, and a manufacturing method of the connecting bridges includes following steps. A metal layer is formed on the substrate first, wherein a material of the metal layer includes silver. A photoresist layer is formed on a surface of the metal layer next, wherein a material of the photoresist layer includes sulfur. A photolithography process and an etching process are respectively performed on the photoresist layer and the metal layer to form the connecting bridges, wherein silver in the metal layer and sulfur in the photoresist layer react with each other to form a silver sulfide layer after the photoresist layer is formed.

CROSS REFERENCE TO RELATED APPLICATION

The present application claims the priority benefit of China applicationserial no. 201711425291.9, filed Dec. 25, 2017. The entirety of theabove-mentioned patent application is hereby incorporated by referenceherein and made a part of this specification.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention relates to a touch panel, a touch display device,and a manufacturing method of a touch panel, and more particularly, to atouch panel, a touch display device, and a manufacturing method of atouch panel that can reduce the reflectivity of connecting bridges.

2. Description of the Prior Art

Touch panel has been widely used in all kinds of electronic products,wherein users can directly communicate with electronic products throughthe screen instead of traditional input devices such as keyboard andmouse, and therefore the volume of electronic product can be reduced andthe convenience of communication between human and machine can beimproved. In the conventional touch panel, sensing electrodes can beelectrically connected by connecting bridges, and the connecting bridgescan be formed of transparent conductive material (such as indium tinoxide (ITO)). In general, the transparent conductive material has lowerreflectivity but higher resistance. Therefore, when the touch panel haslarger scale, the connecting bridges are designed to be formed ofmetallic material for lowering the resistance of the connecting bridges.However, when the connecting bridges are formed of metallic material,the connecting bridges will have higher reflectivity due to thecharacteristic of metallic material and result in problems such asvisual effect of touch panel.

SUMMARY OF THE INVENTION

The technical problem to be solved by this invention is that when theconnecting bridges in the touch panel are formed of metallic material,the connecting bridges can have high reflectivity, which causes theproblem of visual effect of the touch panel.

In order to solve the above problems, the present invention provides amanufacturing method of a touch panel. The manufacturing method includesfollowing steps. A plurality of first sensing electrodes and a pluralityof connecting bridges are formed on a substrate first, wherein adjacenttwo of the first sensing electrodes are connected by at least one of theconnecting bridges, and a manufacturing method of the connecting bridgesincludes following steps. A metal layer is formed on the substratefirst, wherein a material of the metal layer includes silver. Aphotoresist layer is formed on a surface of the metal layer next,wherein a material of the photoresist layer includes sulfur. Later, aphotolithography process and an etching process are respectivelyperformed on the photoresist layer and the metal layer, wherein silverin the metal layer and sulfur in the photoresist layer react with eachother to form a silver sulfide layer after the photoresist layer isformed.

In order to solve the above problems, the present invention provides atouch panel. The touch panel includes a substrate, a plurality of firstsensing electrodes and a plurality of connecting bridges. The firstsensing electrodes and the connecting bridges are disposed on thesubstrate, wherein adjacent two of the first sensing electrodes areconnected by at least one of the connecting bridges, and the connectingbridges includes a patterned metal layer and a patterned silver sulfidelayer, wherein the patterned metal layer is disposed between thesubstrate and the patterned silver sulfide layer.

In order to solve the above problems, the present invention provides atouch display device. The touch display device includes a firstsubstrate, a display medium layer, and a touch panel. The display mediumlayer is disposed on the first substrate, and the touch panel isdisposed on the display medium layer. The touch panel includes a secondsubstrate and a plurality of first sensing electrodes and a plurality ofconnecting bridges disposed on the second substrate, wherein adjacenttwo of the first sensing electrodes are connected by at least one of theconnecting bridges, and the connecting bridges includes a patternedmetal layer and a patterned silver sulfide layer, wherein the patternedmetal layer is disposed between the second substrate and the patternedsilver sulfide layer.

In the touch panel, the touch display device, and the manufacturingmethod of the touch panel of the present invention, the connectingbridges include the patterned silver sulfide layer disposed on thesurface of the patterned metal layer. Since the color of silver sulfideis black and the reflectivity of silver sulfide is low, the problem ofvisual effect of the touch panel brought by the conventional metalconnecting bridges and their high reflectivity can be solved. Further,the patterned metal layer included in each of the connecting bridgesmakes the connecting bridges have a lower resistance. Additionally, inthe method of forming the connecting bridges in this invention, silveris used as one of the materials in the metal layer for forming theconnecting bridges, wherein the layer which contains silver is the topone in the metal layer. The sulfur contained photoresist material isused in the following photolithography process, such that the silversulfide layer can be formed between the photoresist layer and the metallayer due to the characteristic of strong reactivity between silver andsulfur. Accordingly, the method of forming the connecting bridges inthis invention does not increase the difficulty or the amount ofprocesses comparing to the conventional method.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram illustrating a top view of formingconnecting bridges and traces in a manufacturing method of a touch panelaccording to a first embodiment of the present invention.

FIGS. 2-6 are schematic diagrams illustrating a method of forming theconnecting bridges in the manufacturing method of the touch panelaccording to the first embodiment of the present invention.

FIG. 7 is a schematic diagram illustrating a top view of forminginsulating islands in the manufacturing method of the touch panelaccording to the first embodiment of the present invention.

FIG. 8 is a schematic diagram illustrating a cross-sectional diagramtaken along a line A-A′ in FIG. 7.

FIG. 9 is a schematic diagram illustrating a top view of forming thefirst sensing electrodes, the second sensing electrodes, and theconnecting lines in the manufacturing method of the touch panelaccording to the first embodiment of the present invention.

FIG. 10 is a schematic diagram illustrating a cross-sectional diagramtaken along a line A-A′ in FIG. 9.

FIG. 11 is a schematic diagram illustrating a process flow of themanufacturing method of the touch panel according to the presentinvention.

FIG. 12 is a schematic diagram illustrating a process flow of the methodof forming the connecting bridges according to the present invention.

FIGS. 13-15 are schematic diagrams illustrating a method of forming theconnecting bridges according to a first variant embodiment of the firstembodiment of the present invention.

FIGS. 16-18 are schematic diagrams illustrating a method of forming theconnecting bridges according to a second variant embodiment of the firstembodiment of the present invention.

FIGS. 19-24 are schematic diagrams illustrating a manufacturing methodof a touch panel according to a second embodiment of the presentinvention.

FIGS. 25-28 are schematic diagrams illustrating a manufacturing methodof a touch panel according to a third embodiment of the presentinvention.

FIG. 29 is a schematic diagram illustrating a cross-sectional view of atouch display device according to the first embodiment.

FIG. 30 is a schematic diagram illustrating a cross-sectional view of atouch display device according to the second embodiment.

FIG. 31 is a schematic diagram illustrating a cross-sectional view of atouch display device according to the third embodiment.

DETAILED DESCRIPTION

To provide a better understanding of the present invention to thoseskilled in the technology, preferred embodiments will be detailed asfollows. The preferred embodiments of the present invention areillustrated in the accompanying drawings with numbered elements toelaborate on the contents and effects to be achieved. It should be notedthat the drawings are simplified schematics, and therefore show only thecomponents and combinations associated with the present invention, so asto provide a clearer description of the basic architecture or method ofimplementation. The components would be complex in reality. In addition,for ease of explanation, the components shown in the drawings may notrepresent their actual number, shape, and dimensions; details can beadjusted according to design requirements.

Referring to FIG. 1 to FIG. 12, FIG. 1 is a schematic diagramillustrating a top view of forming connecting bridges and traces in amanufacturing method of a touch panel according to a first embodiment ofthe present invention, FIGS. 2-6 are schematic diagrams illustrating amethod of forming the connecting bridges in the manufacturing method ofthe touch panel according to the first embodiment of the presentinvention, FIG. 7 is a schematic diagram illustrating a top view offorming insulating islands in the manufacturing method of the touchpanel according to the first embodiment of the present invention, FIG. 9is a schematic diagram illustrating a top view of forming the firstsensing electrodes, the second sensing electrodes, and the connectinglines in the manufacturing method of the touch panel according to thefirst embodiment of the present invention, FIG. 8 and FIG. 10 areschematic diagrams illustrating cross-sectional diagrams taken alonglines A-A′ in FIG. 7 and FIG. 9, FIG. 11 is a schematic diagramillustrating a process flow of the manufacturing method of the touchpanel according to the present invention, and FIG. 12 is a schematicdiagram illustrating a process flow of the method of forming theconnecting bridges according to the present invention. A manufacturingmethod of a touch panel of this embodiment includes following steps.First, as shown in FIG. 1, a plurality of connecting bridges 102 and aplurality of traces 104 are formed on a substrate 100. An active regionR1 and a peripheral region R2 are defined on the substrate 100, theperipheral region R2 locates at at least one side of the active regionR1, and the peripheral region R2 of this embodiment surrounds the activeregion R1, but not limited thereto. The connecting bridges 102 and thetraces 104 are disposed on a surface of the substrate 100, wherein theconnecting bridges 102 are disposed in the active region R1, and thetraces 104 are disposed in the peripheral region R2. The substrate 100may be a rigid substrate such as a glass substrate, a plastic substrate,a quartz substrate, or a sapphire substrate, and the substrate 100 mayalso be a flexible substrate that includes polyimide (PI) orpolyethylene terephthalate (PET), but not limited thereto. The method offorming the connecting bridges 102 of this embodiment is described indetail hereinafter. First, as shown in FIG. 2, a metal layer 106 isformed on the substrate 100 entirely, wherein the material of the metallayer 106 includes silver. For example, the metal layer 106 of thisembodiment includes a stacking layer structure, and the stacking layerstructure includes three metallic material layers such as a silver layer1061, an aluminum layer 1062, and a molybdenum layer 1063. The silverlayer 1061 is the top one of the metallic material layers of thestacking layer structure, the molybdenum layer 1063 is the bottom one ofthe metallic material layers of the stacking layer structure, and thealuminum layer 1062 is disposed between the silver layer 1061 and themolybdenum layer 1063. The method of forming the stacking layerstructure of the metal layer 106 can be sequentially forming themolybdenum layer 1063, the aluminum layer 1062, and the silver layer1061 from the bottom to the top for instance. The silver layer 1061, thealuminum layer 1062, and the molybdenum layer 1063 can be deposited bythe sputtering process for instance, but not limited thereto. Forexample, the thickness of the silver layer 1061 is about 75 angstroms toabout 1000 angstroms, the thickness of the aluminum layer 1062 is about1000 angstroms to about 4000 angstroms, and the thickness of themolybdenum layer 1063 is about 100 angstroms to about 1000 angstroms inthis embodiment, but not limited thereto. Next, as shown in FIG. 3, aphotoresist layer 108 is formed on a surface of the metal layer 106. Inthis embodiment, the photoresist layer 108 is formed on a surface of thesilver layer 1061 and directly contacts the silver layer 1061. Thephotoresist layer 108 is formed of the photosensitive material thatincludes sulfur. In this embodiment, the photoresist layer 108 is apositive photoresist layer, wherein the material of the positivephotoresist layer normally includes sulfur, but not limited thereto. Insome embodiments, the photoresist layer 108 may be the negativephotoresist layer that includes sulfur. After the photoresist layer 108is formed, since the surface of the photoresist layer 108 directlycontacts the surface of the metal layer 106, and since there is a strongreactivity between silver and sulfur, a portion of the silver layer 1061can react with sulfur in the photoresist layer 108 to form a silversulfide layer 110, and the silver sulfide layer 110 is located betweenthe silver layer 1061 and the photoresist layer 108. The chemicalequation of the aforementioned reaction is 2Ag+S→Ag₂S. Additionally, thecolor of the silver sulfide layer 110 is black and thus the silversulfide layer 110 has a relatively low reflectivity to the light. Inthis embodiment, the photoresist layer 108 can be formed by a spincoating process for example, but not limited thereto.

Next, as shown in FIG. 4, a photolithography process 114 is performed onthe photoresist layer 108 to form a patterned photoresist layer 116based on the photosensitive characteristic of the photoresist layer 108,and the patterned photoresist layer 116 is used as a mask in an etchingprocess 118 performed later. The etching process 118 of this embodimentis performed on the silver sulfide layer 110, the silver layer 1061, thealuminum layer 1062, and the molybdenum layer 1063. A portion of thesilver sulfide layer 110 and a portion of the metal layer 106 that arenot covered by the patterned photoresist layer 116 are removed by theetching process 118 to form a patterned silver sulfide layer 122, apatterned silver layer 1201, a patterned aluminum layer 1202, and apatterned molybdenum layer 1203. The patterned silver layer 1201, thepatterned aluminum layer 1202, and the patterned molybdenum layer 1203form a patterned metal layer 120 including a patterned stacking layerstructure, wherein the patterned silver layer 1201, the patternedaluminum layer 1202, and the patterned molybdenum layer 1203 can beregarded as three different patterned metallic material layers. Inaddition, a baking process (e.g., pre-baking process) is performed onthe photoresist layer 108 after forming the photoresist layer 108 on thesurface of the metal layer 106 and before performing thephotolithography process 114 on the photoresist layer 108 to form thepatterned photoresist layer 116, so as to evaporate the solvent in thephotoresist layer 108. The baking temperature of the pre-baking processis about 80° C. to 160° C., and the duration can be 1 minute to 5minutes, but not limited thereto. In addition, another baking process(e.g., hard baking process) is performed on the photoresist layer 108after forming the patterned photoresist layer 116 and before removingthe portion of the silver sulfide layer 110 and the portion of the metallayer 106 that are not covered by the patterned photoresist layer 116,so as to harden the patterned photoresist layer 116. The bakingtemperature of the hard baking process is about 80° C. to 160° C., andthe duration can be 1 minute to 10 minutes, but not limited thereto. Forexample, the baking temperature and the duration of the pre-bakingprocess may be 120° C. and 140 seconds respectively, and the bakingtemperature and the duration of the hard baking process may be 110° C.and 5 minutes respectively, but not limited thereto. The reactionbetween sulfur in the photoresist layer 108 and/or the patternedphotoresist layer 116 and the silver layer 1061 can be speeded up by theaforementioned baking processes, and the silver sulfide layer 110 can beuniformly formed between the silver layer 1061 and the photoresist layer108 due to the aforementioned baking processes. In other embodiments,only one of the aforementioned baking processes can be performed, or atleast one baking process in addition to the aforementioned bakingprocesses can further be performed. Next, as shown in FIG. 5, thepatterned photoresist layer 116 is removed from the substrate 100 toexpose the patterned silver sulfide layer 122, wherein FIG. 5 is across-sectional diagram taken along the line A-A′ in FIG. 1.Accordingly, the connecting bridges 102 formed of the patterned metallayer 120 and the patterned silver sulfide layer 122 in this embodimentcan be formed by the method described above. Note that in thisembodiment, sulfur in the patterned photoresist layer 116 may or may notdiffuse through the silver sulfide layer 110 to continuously react withsilver in the sliver layer 1061 and/or diffuse through the patternedsilver sulfide layer 122 to continuously react with silver in thepatterned sliver layer 1201 to form silver sulfide after the patternedphotoresist layer 116 is formed and before the patterned photoresistlayer 116 is removed from the substrate 100. In addition, in FIG. 2 toFIG. 5, the silver sulfide layer 110 is formed after the photoresistlayer 108 is formed and before the patterned photoresist layer 116 isformed, and the silver sulfide layer 110 that is not covered by thepatterned photoresist layer 116 is etched in the etching process 118 toform the patterned silver sulfide layer 122, but not limited thereto. Ina variant embodiment, the silver sulfide layer 110 is not formed afterthe photoresist layer 108 is formed and before the patterned photoresistlayer 116 is formed (i.e. the silver layer 1061 does not react withsulfur in the photoresist layer 108 to form the silver sulfide layer 110after the photoresist layer 108 is formed and before the patternedphotoresist layer 116 is formed, this may be because the contact timebetween the silver layer 1061 and the photoresist layer 108 is shortand/or the temperature is not high enough to make the silver layer 1061react with sulfur in the photoresist layer 108), and sulfur in thepatterned photoresist layer 116 reacts with the silver layer 1061 and/orthe patterned silver layer 1201 to form the patterned silver sulfidelayer 122 after the patterned photoresist layer 116 is formed and beforethe patterned photoresist layer 116 is removed from the substrate 100(i.e. the baking process performed on the patterned photoresist layer116 makes the silver layer 1061 react with sulfur in the patternedphotoresist layer 116 to form the patterned silver sulfide layer 122).Because the patterned silver sulfide layer 122 is formed after thepatterned photoresist layer 116 is formed, the etching process 118 isperformed on the silver layer 1061, the aluminum layer 1062, and themolybdenum layer 1063 to form a patterned silver layer 1201, a patternedaluminum layer 1202, and a patterned molybdenum layer 1203 in thisvariant embodiment. To sum up, a manufacturing method of the connectingbridges in the present invention comprises forming a metal layercomprising silver on a substrate; forming a photoresist layer comprisingsulfur on a surface of the metal layer; performing a photolithographyprocess and an etching process on the photoresist layer and the metallayer, respectively; and removing the photoresist from the substrate;wherein silver in the metal layer (non-patterned and/or patterned metallayer) and sulfur in the photoresist layer (non-patterned and/orpatterned photoresist layer) react with each other to form a silversulfide layer after the photoresist layer is formed on the surface ofthe metal layer and before the photoresist layer is removed from thesubstrate. In addition, as shown in FIG. 1, the traces 104 in theperipheral region R2 may include the same structure and material as theconnecting bridges 102 in the active region R1, and the traces 104 andthe connecting bridges 102 may be formed together in this embodiment forexample, but not limited thereto. In other embodiments, the traces 104in the peripheral region R2 and the connecting bridges 102 in the activeregion R1 may be formed separately and include different structures andmaterials. In addition, as shown in FIG. 6, the thickness of the silverlayer 1061 is thinner and/or the reaction time of the silver layer 1061and the photoresist layer 108 is longer in some embodiments, such thatthe entire silver layer 1061 can be reacted with sulfur in thephotoresist layer 108, and the silver sulfide layer 110 formed by thereaction can replace the silver layer 1061 completely. Under thecircumstances, the connecting bridges 102 formed afterwards can onlyinclude the patterned silver sulfide layer 122, the patterned aluminumlayer 1202, and the patterned molybdenum layer 1203.

Next, as shown in FIG. 7 and FIG. 8, a plurality of insulating islands124 are formed in the active region R1 of the substrate 100, whereineach of the insulating islands 124 is disposed corresponding to one ofthe connecting bridges 102. Each of the insulating islands 124 partiallycovers the corresponding connecting bridge 102, and two ends of thecorresponding connecting bridge 102 are exposed. For example, the methodof forming the insulating islands 124 in this embodiment includesforming an insulating layer on the substrate 100 first, and performing apatterning process on the insulating layer to form the insulatingislands 124 next, but not limited thereto. The insulating islands 124include insulating material such as silicon oxide, silicon nitride, orsilicon oxynitride, but not limited thereto. Next, a transparentconductive layer is formed on the substrate 100, in which the materialof the transparent conductive layer can include transparent conductivematerial such as indium tin oxide (ITO), indium zinc oxide (IZO), oraluminum zinc oxide (AZO), but not limited thereto. Next, as shown inFIG. 9 and FIG. 10, a patterning process is performed on the transparentconductive layer to form a patterned transparent conductive layer thatincludes a plurality of first sensing electrodes 1261, a plurality ofsecond sensing electrodes 1281, and a plurality of connecting lines1282. In short, the first sensing electrodes 1261, the second sensingelectrodes 1281, and the connecting lines 1282 in this embodiment areformed of the same material which is the transparent conductivematerial, but not limited thereto. The first sensing electrodes 1261,the second sensing electrodes 1281, and the connecting lines 1282 aredisposed in the active region R1. In addition, each of the first sensingelectrodes 1261 partially covers and contacts one end of thecorresponding connecting bridge 102. Therefore, two adjacent firstsensing electrodes 1261 are electrically connected through one of theconnecting bridges 102, and the first sensing electrodes 1261 and theconnecting bridges 102 form a plurality of first sensing electrodeseries 126, wherein each of the first sensing electrode series 126extends in a first direction D1. In this embodiment, two adjacent firstsensing electrodes 1261 are electrically connected by one connectingbridge 102, but not limited thereto. In other embodiments, each of theinsulating islands 124 is disposed corresponding to two or more of theconnecting bridges 102 and partially covers the corresponding connectingbridges 102, and two adjacent first sensing electrodes 1261 areelectrically connected by multiple connecting bridges 102 in order toreduce the resistance of the first sensing electrode series 126 andprevent the electrical disconnection between two adjacent first sensingelectrodes 1261 during the manufacturing processes or when the touchpanel is bent. To sum up, each of the insulating islands 124 is disposedcorresponding to at least one of the connecting bridges 102 andpartially covers the at least one corresponding connecting bridge 102,and two adjacent first sensing electrodes 1261 are electricallyconnected through at least one of the connecting bridges 102 in thepresent invention. For example, two adjacent first sensing electrodes1261 can be connected by two connecting bridges 102. Under thecircumstances, if one of the connecting bridges 102 is broken during themanufacturing processes of the connecting bridges 102, or if one of theconnecting bridges 102 is broken by the stress when the touch panel is aflexible touch panel and the touch panel is bent, the adjacent two firstsensing electrodes 1261 still can be electrically connected by anotherconnecting bridge 102. Therefore, the yield and the reliability of thetouch panel can be improved. In addition, when two adjacent firstsensing electrodes 1261 are electrically connected by multipleconnecting bridges 102, the two adjacent first sensing electrodes 1261can be regarded as being electrically connected by multiple connectingbridges that are electrically connected in parallel with each other, theresistance of the first sensing electrode series 126 can therefore bereduced, and the accuracy of touch sensing can also be improved. In thisembodiment, the extension direction of the connecting bridges 102 isparallel to the first direction D1, but not limited thereto. Forexample, the touch panel may be a flexible touch panel, wherein abending axis of the touch panel is parallel to a second direction D2,and the second direction is D2 is perpendicular to the first directionD1. Under the circumstances, if the extension direction of theconnecting bridges 102 is parallel to the first direction D1, theconnecting bridges 102 may suffer a relatively large stress that maymake the connecting bridges 102 break when the touch panel is bentaccording to the bending axis. Therefore, the extension direction of theconnecting bridges 102 and the first direction D1 can be designed tohave an included angle that is greater than 0 degree and less than 90degrees, so as to reduce the stress introduced to the connecting bridges102 when the touch panel is bent according to the bending axis andimprove the reliability of the touch panel. In addition, two adjacentsecond sensing electrodes 1281 are connected by one of the connectinglines 1282, and the second sensing electrodes 1281 and the connectinglines 1282 can form a plurality of second sensing electrode series 128,wherein each of the second sensing electrode series 128 extends in thesecond direction D2. The first direction D1 and the second direction D2are not parallel, and the first direction D1 is perpendicular to thesecond direction D2 in this embodiment, but not limited thereto. In thisembodiment, two adjacent second sensing electrodes 1281 are connected byone of the connecting lines 1282, and the extension direction of theconnecting lines 1282 is parallel to the second direction D2, but notlimited thereto. In other embodiments, the two adjacent second sensingelectrodes 1281 can be connected by multiple connecting lines 1282, andsuch configuration can be similar to the above description of the firstsensing electrodes 1261 and the connecting bridges 102. In still anotherembodiment, the extension direction of the connecting lines 1282 and thesecond direction D2 can have an included angle that is greater than 0degree and less than 90 degrees. In addition, each of the connectinglines 1282 partially covers the corresponding insulating island 124, andthe insulating islands 124 are disposed between the connecting bridges102 and the connecting lines 1282. Therefore, the insulating islands 124can electrically isolate the connecting bridges 102 from the connectinglines 1282, so as to electrically isolate the first sensing electrodeseries 126 from the second sensing electrode series 128.

In addition, the patterned transparent conductive layer of thisembodiment further includes a plurality of bonding pads 130 disposed inthe peripheral region R2, wherein each of the bonding pads 130 isconnected to one of the traces 104, and each of the bonding pads 130 isdisposed at one end of the corresponding trace 104, but not limitedthereto. In some embodiments, the bonding pads 130 and the connectingbridges 102 are formed simultaneously and have the same structure andmaterial, but not limited thereto. In other embodiments, the bondingpads 130 can include the double layer stacking layer structure, whereinone layer in the double layer stacking layer structure can be formedsimultaneously with the connecting bridges 102 and can have the samestructure and material as the connecting bridges 102, and another layerin the double layer stacking layer structure can be formedsimultaneously with the patterned transparent conductive layer and canhave the same structure and material as the patterned transparentconductive layer. In addition, another end of each of the traces 104 isconnected to one of the first sensing electrodes 1261 of one of thefirst sensing electrode series 126 or one of the second sensingelectrodes 1281 of one of the second sensing electrode series 128.Therefore, the first sensing electrode series 126 and the second sensingelectrode series 128 can be connected to an integrated circuit (IC) (notshown in the figure) through the bonding pads 130, but not limitedthereto. The sensing type of the touch panel in this embodiment is themutual-capacitive touch sensing, but not limited thereto. Each firstsensing electrode 1261 can be the transmitter electrode, each secondsensing electrode 1281 can be the receiver electrode, and vice versa. Inother embodiments, the sensing type of the touch panel can be theself-capacitive touch sensing. The touch panel 10 shown in FIG. 9 can bemanufactured according to the manufacturing method of this embodimentdescribed above. However, the touch panel 10 of this invention is notlimited to the above description, other devices and the correspondingmanufacturing methods in the conventional touch panel can also beintegrated into the touch panel 10 and the corresponding manufacturingmethod of this embodiment. To sum up, the manufacturing method of thetouch panel 10 of this embodiment mainly includes step S10 to step S12shown in FIG. 11, and the sequence of performing step S10 to step S12 isnot limited to the following order.

Step S10: Forming a plurality of connecting bridges on a substrate; and

S12: Forming a plurality of first sensing electrodes and a plurality ofsecond sensing electrodes on the substrate, wherein adjacent two of thefirst sensing electrodes are connected by at least one of the connectingbridges.

Further, the method of forming the connecting bridges 102 of thisembodiment can include step S100 to step S104 shown in FIG. 12, and thesequence of performing step S100 to step S104 is not limited to thefollowing order.

S100: Forming a metal layer on the substrate, wherein a material of themetal layer includes silver;

S102: Forming a photoresist layer on a surface of the metal layer,wherein a material of the photoresist layer includes sulfur; and

S104: Performing a photolithography process and an etching process onthe photoresist layer and the metal layer, respectively, wherein silverin the metal layer and sulfur in the photoresist layer react with eachother to form a silver sulfide layer after the photoresist layer isformed.

Accordingly, the touch panel 10 (as shown in FIG. 9 and FIG. 10) of thisembodiment can be manufactured by the above method. The touch panel 10includes the substrate 100, the first sensing electrodes 1261, and theconnecting bridges 102. The first sensing electrodes 1261 and theconnecting bridges 102 are disposed on the substrate 100, wherein twoadjacent first sensing electrodes 1261 are connected by at least one ofthe connecting bridges 102. The connecting bridges 102 include thepatterned metal layer 120 and the patterned silver sulfide layer 122,wherein the patterned metal layer 120 is disposed between the substrate100 and the patterned silver sulfide layer 122. According to the touchpanel 10 of this embodiment and the manufacturing method thereof, thesilver layer 1061 is the top one of the metallic material layers of thestacking layer structure of the metal layer 106 as shown in FIG. 2, andsulfur contained photoresist layer 108 is formed on the surface of thesilver layer 1061 and contacts the silver layer 1061, such that thesilver layer 1061 can react with sulfur in the photoresist layer 108 toform the silver sulfide layer 110, and the connecting bridges 102 formedafterwards can include the patterned metal layer 120 and the patternedsilver sulfide layer 122 covering the patterned metal layer 120. Sincethe color of silver sulfide is black, silver sulfide can therefore havea lower reflectivity, and the problem of visual effect of the touchpanel brought by the conventional metal connecting bridges can be solvedby the design of this invention. Further, the patterned metal layer 120included in each of the connecting bridges 102 makes the connectingbridges 102 have a lower resistance. Additionally, the method of formingthe connecting bridges 102 in this embodiment does not increase thedifficulty or the amount of processes comparing to the conventionalmethod.

The touch panel and the manufacturing method thereof of the presentinvention are not limited to the aforementioned embodiment. Thefollowing description continues to detail other embodiments or variantembodiments. To simplify the description and show the difference betweenother embodiments, variant embodiments and the above-mentionedembodiment, identical components in each of the following embodimentsare marked with identical symbols, and the identical features will notbe redundantly described.

Referring to FIG. 13, FIG. 14, and FIG. 15, FIGS. 13-15 are schematicdiagrams illustrating a method of forming the connecting bridgesaccording to a first variant embodiment of the first embodiment of thepresent invention. As shown in FIG. 13 and FIG. 14, the main differencebetween this variant embodiment and the first embodiment is that thestacking layer structure of the metal layer 106 in this variantembodiment includes the silver layer 1061 and the molybdenum layer 1063but does not include the aluminum layer 1062. In this variantembodiment, the thickness of the silver layer 1061 is about 75 angstromsto about 1000 angstroms, and the thickness of the molybdenum layer 1063is about 100 angstroms to about 1000 angstroms, but not limited thereto.In addition, the silver layer 1061 is still the top one of the metallicmaterial layers of the stacking layer structure in order to be incontact with the sulfur contained photoresist layer 108, and thus aportion of the silver layer 1061 can be reacted with the sulfur to formthe silver sulfide layer 110. Next, the baking processes, thephotolithography process, the etching process, and the process ofremoving the remaining photoresist layer can be performed to form theconnecting bridge 102 shown in FIG. 15. The above processes can be thesame as the first embodiment and can refer to FIG. 2 to FIG. 5, but notlimited thereto. In short, the connecting bridges 102 of this variantembodiment includes the patterned silver sulfide layer 122 and thepatterned metal layer 120, wherein the patterned metal layer 120 onlyincludes the patterned silver layer 1201 and the patterned molybdenumlayer 1203 but not include the patterned aluminum layer 1202. Inaddition, in some embodiments, the thickness of the silver layer 1061 isthinner and/or the reaction time of the silver layer 1061 and thephotoresist layer 108 is longer, such that the entire silver layer 1061can be reacted with sulfur in the photoresist layer 108, and the silversulfide layer 110 formed by the reaction can replace the silver layer1061 completely. Under the circumstances, the connecting bridges 102formed afterwards can only include the patterned silver sulfide layer122 and the patterned molybdenum layer 1203.

Referring to FIG. 16, FIG. 17, and FIG. 18, FIGS. 16-18 are schematicdiagrams illustrating a method of forming the connecting bridgesaccording to a second variant embodiment of the first embodiment of thepresent invention. As shown in FIG. 16 and FIG. 17, the main differencebetween this variant embodiment and the first embodiment is that themetal layer 106 is the silver layer 1061 and does not include thealuminum layer 1062 and the molybdenum layer 1063, and therefore themetal layer 106 of this variant embodiment is a single layer structure.In this variant embodiment, the thickness of the silver layer 1061 isabout 75 angstroms to about 1000 angstroms, but not limited thereto.Similar to the above embodiments, the silver layer 1061 of this variantembodiment can react with the sulfur contained photoresist layer 108disposed on the surface of the silver layer 1061 to form the silversulfide layer 110. Next, the baking processes, the photolithographyprocess, the etching process, and the process of removing the remainingphotoresist layer can be performed to form the connecting bridge 102shown in FIG. 18. The above processes can be the same as the firstembodiment and can refer to FIG. 2 to FIG. 5, and thus the aboveprocesses are not redundantly described herein, but not limited thereto.In short, the connecting bridges 102 of this variant embodiment includethe patterned silver sulfide layer 122 and the patterned metal layer120, wherein the patterned metal layer 120 only includes the patternedsilver layer 1201.

Referring to FIG. 19 to FIG. 24, FIGS. 19-24 are schematic diagramsillustrating a manufacturing method of a touch panel according to asecond embodiment of the present invention, wherein FIG. 19, FIG. 21,and FIG. 23 are top view diagrams, and FIG. 20, FIG. 22, and FIG. 24 arecross-sectional diagrams taken along lines B-B′ in FIG. 19, FIG. 21, andFIG. 23. The manufacturing method of the touch panel in this embodimentincludes the following steps. First, as shown in FIG. 19 and FIG. 20,the patterned transparent conductive layer is formed on the substrate100, and the patterned transparent conductive layer includes the firstsensing electrodes 1261, the second sensing electrodes 1281, and theconnecting lines 1282 disposed in the active region R1. Two adjacentsecond sensing electrodes 1281 are connected by one of the connectinglines 1282, and the second sensing electrodes 1281 and the connectinglines 1282 form multiple second sensing electrode series 128. Inaddition, the patterned transparent conductive layer includes thebonding pads 130 disposed in the peripheral region R2. The method offorming the patterned transparent conductive layer can be the same asthe first embodiment, and therefore it is not redundantly describedherein. Next, as shown in FIG. 21 and FIG. 22, the insulating islands124 are formed in the active region R1 and on the substrate 100, whereineach insulating island 124 is disposed corresponding to one of theconnecting lines 1282. Each insulating island 124 partially covers thecorresponding connecting line 1282 and fills in the gaps between thefirst sensing electrodes 1261 and the connecting lines 1282. The methodof forming the insulating islands 124 can be the same as the firstembodiment, and therefore it is not redundantly described herein.

Next, as shown in FIG. 23 and FIG. 24, the connecting bridges 102 andthe traces 104 are formed on the substrate 100, wherein the connectingbridges 102 are disposed in the active region R1, and the traces 104 aredisposed in the peripheral region R2. Each connecting bridge 102 isdisposed corresponding to one of the insulating islands 124, whereineach connecting bridge 102 partially covers the corresponding insulatingisland 124 and extends across the corresponding insulating island 124 toconnect the first sensing electrodes 1261 disposed at two sides of thecorresponding insulating island 124. Accordingly, two adjacent firstsensing electrodes 1261 can be connected by at least one of theconnecting bridges 102, and the first sensing electrodes 1261 and theconnecting bridges 102 form multiple first sensing electrode series 126.The structure of the connecting bridges 102 of this embodiment can bethe same as that of the first embodiment. The connecting bridges 102 caninclude the patterned metal layer 120 and the patterned silver sulfidelayer 122, wherein the patterned metal layer 120 includes the patternedsilver layer 1201, the patterned aluminum layer 1202, and the patternedmolybdenum layer 1203, and the patterned silver sulfide layer 122 coversthe patterned silver layer 1201. In addition, the method of forming theconnecting bridges 102 can refer to the first embodiment, and it is notredundantly described herein. Note that the structure of the connectingbridges 102 of this embodiment is not limited to the example shown inFIG. 24. For example, the connecting bridges 102 of this embodiment canhave the stacking layer structure of the first variant embodiment or thesingle layer structure of the second variant embodiment, wherein theconnecting bridges 102 can at least include the patterned silver layer1201 and the patterned silver sulfide layer 122 that covers thepatterned silver layer 1201, or the connecting bridges 102 of thisembodiment may include the patterned metal layer 120 and the patternedsilver sulfide layer 122 that covers the patterned metal layer 120,wherein the patterned metal 120 does not include the patterned silverlayer 1201 contacting the patterned silver sulfide layer 122 (i.e.entire silver layer 1061 of the metal layer 106 reacts with sulfur inthe photoresist layer 108, and the silver sulfide layer 110 formed bythe reaction replaces the silver layer 1061 completely). In FIG. 23, twoadjacent first sensing electrodes 1261 are electrically connected by oneconnecting bridge 102, but not limited thereto. In a variant embodiment,two adjacent first sensing electrodes 1261 are electrically connected bymultiple connecting bridges 102. In addition, one end of each trace 104can be connected to one of the first sensing electrode series 126 or oneof the second sensing electrode series 128, and another end of eachtrace 104 can be connected to one of the bonding pads 130. Details ofthe manufacturing methods of the touch panel 10 and the connectingbridges 102 of this embodiment can refer to the first embodiment, andthey are not redundantly described herein.

Referring to FIG. 25 to FIG. 28, FIGS. 25-28 are schematic diagramsillustrating a manufacturing method of a touch panel according to athird embodiment of the present invention, wherein FIG. 25 and FIG. 27are top view diagrams, and FIG. 26 and FIG. 28 are cross-sectionaldiagrams taken along lines C-C′ in FIG. 25 and FIG. 27. In the thirdembodiment, the process shown in FIG. 25 and FIG. 26 is performed afterthe process shown in FIG. 19 and FIG. 20. As shown in FIG. 25 and FIG.26, a patterned insulating layer 132 is formed on the substrate 100 tocover the first sensing electrodes 1261 and the second sensing electrodeseries 128 after the first sensing electrodes 1261, the second sensingelectrodes 1281, and the connecting lines 1282 are formed. The patternedinsulating layer 132 of this embodiment includes a plurality of contactholes 1341 and a plurality of contact holes 1342. Each contact hole 1341exposes a portion of one of the first sensing electrodes 1261, and eachcontact hole 1342 exposes a portion of one of the first sensingelectrodes 1261 or a portion of one of the second sensing electrodes1281 that is disposed at the edge of the active region R1. The method offorming the patterned insulating layer 132 of this embodiment may, forexample, include forming an insulating layer on the substrate 100entirely first, and performing a patterning process on the insulatinglayer to form the contact holes 1341 and the contact holes 1342 next,but not limited thereto.

Next, as shown in FIG. 27 and FIG. 28, the connecting bridges 102 andthe traces 104 are formed on the patterned insulating layer 132. Theconnecting bridges 102 are disposed in the active region R1, and thetraces 104 are disposed in the peripheral region R2. In this embodiment,each connecting bridge 102 is disposed between two adjacent firstsensing electrodes 1261, wherein each connecting bridge 102 fills intothe corresponding contact holes 1341 and contacts the portions of thefirst sensing electrodes 1261 exposed by the corresponding contact holes1341. In short, each connecting bridge 102 is electrically connected tothe exposed first sensing electrodes 1261 through the contact holes1341, and therefore each of the connecting bridges 102 is electricallyconnected to adjacent two of the first sensing electrodes 1261 throughtwo of the contact holes 1341. Accordingly, two adjacent first sensingelectrodes 1261 can be connected by at least one of the connectingbridges 102, and the first sensing electrodes 1261 and the connectingbridges 102 can form multiple first sensing electrode series 126. Thestructure of the connecting bridges 102 of this embodiment can be thesame as that of the first embodiment. The connecting bridges 102 caninclude the patterned metal layer 120 and the patterned silver sulfidelayer 122, wherein the patterned metal layer 120 includes the patternedsilver layer 1201, the patterned aluminum layer 1202, and the patternedmolybdenum layer 1203, and the patterned silver sulfide layer 122 coversthe patterned silver layer 1201. In addition, the method of forming theconnecting bridges 102 can refer to the first embodiment, and it is notredundantly described herein. Note that the structure of the connectingbridges 102 of this embodiment is not limited to the example shown inFIG. 28. For example, the connecting bridges 102 of this embodiment canhave the stacking layer structure of the first variant embodiment or thesingle layer structure of the second variant embodiment, wherein theconnecting bridges 102 can at least include the patterned silver layer1201 and the patterned silver sulfide layer 122 that covers thepatterned silver layer 1201, or the connecting bridges 102 of thisembodiment may include the patterned metal layer 120 and the patternedsilver sulfide layer 122 that covers the patterned metal layer 120,wherein the patterned metal 120 does not include the patterned silverlayer 1201 contacting the patterned silver sulfide layer 122. Inaddition, one end of each trace 104 can electrically connect one of thefirst sensing electrodes 1261 or one of the second sensing electrodes1281 disposed at the edge of the active region R1 through thecorresponding contact hole 1342, such that each trace 104 can beelectrically connected to one of the first sensing electrode series 126or one of the second sensing electrode series 128. Further, another endof each trace 104 connects one of the bonding pads 130. Other details ofthe manufacturing methods of the touch panel 10 and the connectingbridges 102 of this embodiment can refer to the above embodiments, andthey are not redundantly described herein.

Referring to FIG. 29, FIG. 29 is a schematic diagram illustrating across-sectional view of a touch display device according to the firstembodiment. As shown in FIG. 29, the touch display device 20 includesthe touch panel 10 and a display panel 30. The touch panel 10 can be anytouch panel disclosed in the above embodiments. The display panel 30includes a lower substrate 301, at least one thin film transistor (TFT)302, a first electrode 303, a display medium layer 304, and an uppersubstrate 305. The lower substrate 301 includes a first surface 301 aand a second surface 301 b opposite to the first surface 301 a, theupper substrate 305 includes a third surface 305 a and a fourth surface305 b opposite to the third surface 305 a, and the touch panel 10 isdisposed on the fourth surface 305 b of the upper substrate 305 that isopposite to the display medium layer 304. The display medium layer 304may be a liquid crystal layer or light emitting diode device layer, butnot limited thereto. For example, when the display panel 30 is a liquidcrystal display panel, the display medium layer 304 can be the liquidcrystal layer, the first electrode 303 can be a pixel electrode, and theTFT 302 can be disposed on the lower substrate 301 and electricallyconnected to the first electrode 303. Since the structure of the TFT 302and the connection between the TFT 302 and the first electrode 303 aregeneral technologies in this field, they are not redundantly describedherein, and they are not shown in FIG. 29 to simplify the figure. TheTFT 302 may be the top gate TFT or the bottom gate TFT, and the TFT 302may be amorphous silicon TFT, low temperature polysilicon (LTPS) TFT,indium gallium zinc oxide (IGZO) TFT, or other suitable TFTs.Additionally, the display panel 30 further includes a second electrode(not shown in the figure) serving as the common electrode, and thesecond electrode can be disposed between the lower substrate 301 and thedisplay medium layer 304 or between the upper substrate 305 and thedisplay medium layer 304. Gate lines, data lines, an alignment layer, orthe combination thereof may be disposed between the lower substrate 301and the display medium layer 304, but not limited thereto. A colorfilter layer, a shielding layer (or so-called as black matrix layer), analignment layer, or the combination thereof may be disposed between theupper substrate 305 and the display medium layer 304, but not limitedthereto. In the embodiment of color filter on array (COA) or blackmatrix on array (BOA), at least one of the color filter layer or theshielding layer is disposed between the lower substrate 301 and thedisplay medium layer 304. When the display panel 30 is an active organiclight emitting display panel, the display medium layer 304 can be anorganic light emitting diode device layer which includes an organiclight emitting layer. The organic light emitting diode device layer canhave a stacking layer structure. For example, the organic light emittingdiode device layer can include a hole transporting layer, the organiclight emitting layer, and an electron transporting layer, but notlimited thereto. When the display panel 30 is a micro-LED display panel,the display medium layer 304 can be a light emitting diode device layerwhich includes a p-n diode layer. For example, the p-n diode layer caninclude a p-doped layer and an n-doped layer. Additionally, in someembodiments, the p-n diode layer can further include a quantum welllayer disposed between the p-doped layer and the n-doped layer, but notlimited thereto. In the above embodiments of the active organic lightemitting display panel and the micro-LED display panel, the TFT 302 isdisposed on the lower substrate 301 and electrically connected to thefirst electrode 303, and the first electrode 303 is electricallyconnected to the display medium layer 304. In addition, the displaypanel 30 further includes the second electrode (not shown in the figure)disposed between the display medium layer 304 and the upper substrate305, and the second electrode is electrically connected to the displaymedium layer 304. One of the first electrode 303 and the secondelectrode is cathode and another one of the first electrode 303 and thesecond electrode is anode, so as to drive the organic light emittinglayer or the p-n diode layer to emit light. In the embodiment shown inFIG. 29, the touch display device 20 is an out-cell touch displaydevice, wherein an adhesive layer (not shown in the figure) can bedisposed between the touch panel 10 and the upper substrate 305, suchthat the touch panel 10 can be disposed on the fourth surface 305 b ofthe upper substrate 305 through the adhesive layer, but not limitedthereto. In addition, the lower substrate 301 and the upper substrate305 of the display panel 30 in this embodiment can be regarded as afirst substrate and a third substrate of the touch display device 20respectively, and the substrate 100 of the touch panel 10 can beregarded as a second substrate of the touch display device 20.

Referring to FIG. 30, FIG. 30 is a schematic diagram illustrating across-sectional view of a touch display device according to the secondembodiment. As shown in FIG. 30, the touch display device 40 includes adisplay panel 30 and a touch device layer 50, wherein each layer in thedisplay panel 30 is similar to that described in the embodiment shown inFIG. 29, and it is not redundantly described herein. The touch devicelayer 50 is disposed on the fourth surface 305 b of the upper substrate305 that is opposite to the display medium layer 304. The touch devicelayer 50 can include the first sensing electrodes 1261, the secondsensing electrodes 1281, the connecting bridges 102, the connectinglines 1282, the traces 104, and the bonding pads 130 disclosed in anyembodiment described above. The upper substrate 305 and the touch devicelayer 50 form the touch panel 10. In the touch panel 10 of thisembodiment, the upper substrate 305 can correspond to the substrate 100of the touch panel 10 disclosed in any embodiment described above, andthe touch panel 10 can be the touch panel disclosed in any embodimentdescribed above. In this embodiment, the lower substrate 301 and theupper substrate 305 of the display panel 30 can be regarded as a firstsubstrate and a second substrate of the touch display device 40respectively. In this embodiment, the touch display device 40 is anon-cell touch display device, wherein the touch device layer 50 isdirectly disposed on the fourth surface 305 b of the upper substrate 305that is opposite to the display medium layer 304, such that the touchdevice layer 50 and the upper substrate 305 form the touch panel 10. Thedisplay panel 30 and the touch panel 10 share the upper substrate 305.For example, when the display panel 30 is a liquid crystal displaypanel, at least one TFT, gate lines, data lines, electrodes, analignment layer, or the combination thereof can be disposed on the lowersubstrate 301, and a color filter layer, a shielding layer, electrodes,an alignment layer, or the combination thereof can be disposed on theupper substrate 305. After the above structures are formed, the liquidcrystal layer is dispensed and formed on the lower substrate 301, andthe lower substrate 301 is bonded with the upper substrate 305 to formthe display panel 30. Next, the touch device layer 50 is disposed on thefourth surface 305 b of the upper substrate 305 of the display panel 30to form the touch display device 40, but not limited thereto. In otherembodiments, the touch device layer 50 can be disposed on the fourthsurface 305 b of the upper substrate 305 before the lower substrate 301is bonded with the upper substrate 305, and the lower substrate 301 isbonded with the upper substrate 305 later to form the touch displaydevice 40. Comparing to the embodiment shown in FIG. 29, one substrateis omitted in the touch display device 40 of this embodiment, andtherefore the touch display device 40 can be thinner.

Referring to FIG. 31, FIG. 31 is a schematic diagram illustrating across-sectional view of a touch display device according to the thirdembodiment. As shown in FIG. 31, the touch display device 60 includesthe touch panel 10 and a display panel 70, wherein the touch panel 10can be the touch panel disclosed in any embodiment described above. Thedisplay panel 70 includes a first substrate 701, at least one TFT 702, afirst electrode 703, an organic light emitting diode device layer 704, asecond electrode 705, and a thin film encapsulation layer 706. The firstsubstrate 701 includes a first surface 701 a and a second surface 701 bopposite to the first surface 701 a. The thin film encapsulation layer706 includes a third surface 706 a and a fourth surface 706 b oppositeto the third surface 706 a, and the touch panel 10 is disposed on thefourth surface 706 b of the thin film encapsulation layer 706 that isopposite to the organic light emitting diode device layer 704. In thisembodiment, the first substrate 701 of the display panel 70 and thesubstrate 100 of the touch panel 10 can be regarded as a first substrateand a second substrate of the touch display device 60 respectively. Oneof the first electrode 703 and the second electrode 705 can be cathodeand another one of the first electrode 703 and the second electrode 705can be anode, so as to drive the organic light emitting diode devicelayer 704 to emit light. The display panel 70 of this embodiment is anactive organic light emitting display panel. For example, the displaypanel 70 can be a flexible active organic light emitting display panel,and the touch panel 10 can be a flexible touch panel. In addition, thefirst substrate 701 of the display panel 70 and the substrate 100 of thetouch panel 10 are flexible substrates, so as to make the touch displaydevice 60 be flexible. The thin film encapsulation layer 706 disposed inthe display panel 70 is required being flexible, and the thin filmencapsulation layer 706 covers the organic light emitting diode devicelayer 704 to prevent oxygen and moisture from entering the organic lightemitting diode device layer 704. In the embodiment shown in FIG. 31, thetouch panel 10 can be disposed on the fourth surface 706 b of the thinfilm encapsulation layer 706 that is opposite to the organic lightemitting diode device layer 704 through an adhesive layer (not shown inthe figure), but not limited thereto. In addition, although thestructures of the touch panels 10 shown in FIG. 29 to FIG. 31 are thesame as the structure of the first embodiment, but they are not limitedthereto. The touch panels 10 in FIG. 29 to FIG. 31 can also have thesame structure as the touch panels 10 in the second embodiment or thethird embodiment. Additionally, the connecting bridges 102 of the touchpanels 10 in FIG. 29 to FIG. 31 can also have the stacking layerstructure of the first variant embodiment or the single layer structureof the second variant embodiment.

To sum up, in the touch panel, the touch display device, and themanufacturing method of the touch panel of the present invention, theconnecting bridges include the patterned silver sulfide layer disposedon the surface of the patterned metal layer. Since the color of silversulfide is black and the reflectivity of silver sulfide is low, theproblem of visual effect of the touch panel brought by the conventionalmetal connecting bridges and their high reflectivity can be solved.Further, the patterned metal layer included in each of the connectingbridges makes the connecting bridges have a lower resistance.Additionally, in the method of forming the connecting bridges in thisinvention, silver is used as one of the materials in the metal layer forforming the connecting bridges, wherein the layer which contains silveris the top one in the metal layer. The sulfur contained photoresistmaterial is used in the following photolithography process, such thatthe silver sulfide layer can be formed between the photoresist layer andthe metal layer due to the characteristic of strong reactivity betweensilver and sulfur. Accordingly, the method of forming the connectingbridges in this invention does not increase the difficulty or the amountof processes comparing to the conventional method.

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

What is claimed is:
 1. A touch panel, comprising: a substrate; and aplurality of first sensing electrodes and a plurality of connectingbridges disposed on the substrate, wherein adjacent two of the firstsensing electrodes are connected by at least one of the connectingbridges, and the connecting bridges comprises a patterned metal layerand a patterned silver sulfide layer, wherein the patterned metal layeris disposed between the substrate and the patterned silver sulfidelayer.
 2. The touch panel of claim 1, wherein the patterned metal layerat least comprises a patterned silver layer, and the patterned silversulfide layer directly contacts the patterned silver layer.
 3. The touchpanel of claim 2, wherein the patterned metal layer of the connectingbridges comprises a patterned stacking layer structure, the patternedstacking layer structure comprises at least two different patternedmetallic material layers, and the patterned silver layer is a top one ofthe patterned metallic material layers of the patterned stacking layerstructure.
 4. The touch panel of claim 3, wherein the patterned stackinglayer structure further comprises a patterned molybdenum layer, whereinthe patterned molybdenum layer is disposed between the patterned silverlayer and the substrate.
 5. The touch panel of claim 4, wherein thepatterned stacking layer structure further comprises a patternedaluminum layer, wherein the patterned aluminum layer is disposed betweenthe patterned molybdenum layer and the patterned silver layer.
 6. Thetouch panel of claim 1, further comprising a plurality of second sensingelectrodes and a plurality of connecting lines disposed on thesubstrate, wherein adjacent two of the second sensing electrodes areconnected by at least one of the connecting lines, the first sensingelectrodes and the connecting bridges form a plurality of first sensingelectrode series, the second sensing electrodes and the connecting linesform a plurality of second sensing electrode series, the first sensingelectrode series extend in a first direction and the second sensingelectrode series extend in a second direction, wherein the secondsensing electrode series and the first sensing electrode series areelectrically isolated, and the first direction and the second directionare not parallel.
 7. The touch panel of claim 6, wherein the firstsensing electrodes, the second sensing electrodes, and the connectinglines comprise a transparent conductive material.
 8. The touch panel ofclaim 6, further comprising a plurality of insulating islands, whereineach of the insulating islands is disposed corresponding to at least oneof the connecting bridges, and each of the insulating islands isdisposed between one of the connecting bridges and one of the secondsensing electrode series so as to electrically isolate the connectingbridges from the second sensing electrode series.
 9. The touch panel ofclaim 6, further comprising a patterned insulating layer covering thefirst sensing electrodes and the second sensing electrode series,wherein the patterned insulating layer comprises a plurality of contactholes disposed on the first sensing electrodes, each of the contactholes exposes a portion of one of the first sensing electrodes, and oneof the connecting bridges is electrically connected to the portion ofone of the first sensing electrodes through one of the contact holes.10. A touch display device, comprising: a first substrate; a displaymedium layer disposed on the first substrate; and a touch panel disposedon the display medium layer, the touch panel comprising: a secondsubstrate; and a plurality of first sensing electrodes and a pluralityof connecting bridges disposed on the second substrate, wherein adjacenttwo of the first sensing electrodes are connected by at least one of theconnecting bridges, and the connecting bridges comprises a patternedmetal layer and a patterned silver sulfide layer, wherein the patternedmetal layer is disposed between the second substrate and the patternedsilver sulfide layer.
 11. The touch display device of claim 10, whereinthe display medium layer is a liquid crystal layer or a light emittingdiode device layer.
 12. The touch display device of claim 10, furthercomprising a third substrate disposed between the display medium layerand the second substrate.
 13. The touch display device of claim 10,further comprising a thin film encapsulation layer disposed between thedisplay medium layer and the second substrate.